• Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor
  • Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor
  • Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor
Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

Product Details:

Place of Origin: China
Brand Name: BonTek
Certification: ISO:9001, ISO:14001
Model Number: Silicon Wafer

Payment & Shipping Terms:

Minimum Order Quantity: 25 Pieces
Price: Negotiable
Packaging Details: Cassette / Jar, put in a carton with PE foam.
Delivery Time: 1 - 4 weeks
Payment Terms: T/T
Supply Ability: 100000 Pieces/Month
Get Best Price Contact Now

Detail Information

Material: Silicon Wafer Surface: Double Side Polish, Single Side Polish, Lap
Diameter: 2'' - 12'' Or As Required Thickness: 0.05mm - 10mm
Orientation: <100>, <111>, <110> Resistivity: 0.001 – 300 Ohm/cm
Type: P Type, N Type, Intrinsic Dopant: B, Ph, As Or Undoped
High Light:

Phosphorus Doped Silicon Wafer

,

Boron Doped Semiconductor Wafer

,

High Resistivity Silicon Wafer

Product Description

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor

 

Silicon wafers are thin slices of pure crystalized silicon. These pure forms of wafers are normally called undoped or intrinsic silicon wafer. One of the reasons for using Silicon wafer in semiconductor industry is the natural abundance of Silicon. It is one of the most abundant material found on earth usually found in the form of SiO2. Another reason of using silicon is that electrical characteristics of the silicon can be precisely controlled by addition of dopants. Silicon wafers that are doped with impurities such as Boron create P- type wafers and wafers that are doped with Arsenic or Phosphorous create N-type wafers. The P type wafers have several positive charged holes whereas N type wafers have several negative charged electrons in it.

 

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor 0Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor 1Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor 2

 

SEMI Standard

2" (50.8mm)

3" (76.2mm)

4" (100mm)

5" (125mm)

6" (150mm)

8" (200mm)

12" (300mm)

Diameter

50.8 ± 0.38mm 76.2 ± 0.63mm 100 ± 0.5mm 125 ± 0.5mm 150 ± 0.2mm 200 ± 0.2mm 300 ± 0.2mm

Thickness

279 ± 25µm 381 ± 25µm 525 ± 20 µm or
625 ± 20µm
625 ± 20µm 675 ± 20µm or
625 ± 15µm
725 ± 20µm 775 ± 20µm

Type

P, N or Intrinsic

Dopant

B, Ph, As or Undoped

Orientation

<100>, <111>, <110>

Rsistivity

0.001 – 300 ohm/cm

Primary Flat Length

15.88 ± 1.65mm 22.22 ± 3.17mm 32.5 ± 2.5mm 42.5 ± 2.5mm 57.5 ± 2.5mm Notch Notch

Secondary Flat Length

8 ± 1.65mm 11.18 ± 1.52mm 18 ± 2.0mm 27.5 ± 2.5mm 37.5 ± 2.5mm NA NA

Surface Finish

SSP, DSP, Etched, or Lapped
 

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor 3

 

Acceptance Check

Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor 4

 

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

 

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

 

3. Please open the vacuum package in a clean room when the products are to be applied.

 

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.

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